Layer with discrete islands formed on a substrate support

An epitaxial processing chamber, comprising:

• a lid, walls and a bottom defining a processing volume;
• a substrate support disposed in the processing volume, the substrate support comprising:
• a susceptor body formed of a graphite material and having a center, an outer perimeter connecting a substrate support surface and a backside surface, the susceptor body consisting essentially of:
• a pocket disposed on the substrate support surface at a center of the substrate support surface;
• a lip disposed between the pocket and the outer perimeter, wherein the lip extends away from the backside surface and above the pocket;
• a layer formed of a silicon carbide (SiC) material on the substrate support surface in the pocket, the layer comprising:
• a plurality of discrete islands of the second material formed in less than about 7% of the pocket on the substrate support surface, wherein the plurality of discrete islands are disposed concentrically about the center of the substrate support surface;
• and
• one or more troughs in the silicon carbide (SiC) material disposed between the plurality of discrete islands, wherein a first thickness from the substrate support surface of the silicon carbide (SiC) material at the plurality of discrete islands is greater than a second thickness from the substrate support surface of the silicon carbide (SiC) material at the troughs;
• and
• a plurality of support pins disposed in the pocket, the plurality of support pins extending through the silicon carbide (SiC) material.