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US 12,497,692 B2Granted
Halogen resistant coatings and methods of making and using thereof
AssigneeApplied Materials, Inc.
InventorsPrerna Goradia, Jennifer Y. Sun, Xiaowei Wu, Geetika Bajaj, Atul Chaudhari, Ankur Kadam
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Abstract
Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.
Claims19
A method comprising:
- depositing a halogen resistant coating on a surface of a portion of a chamber component using an atomic layer deposition process, comprising:
- depositing a hydrogen seed layer onto the surface of the portion of the chamber component using the atomic layer deposition process, wherein the hydrogen seed layer is used as an adhesion layer;
- depositing a transition metal-containing layer over the hydrogen seed layer using the atomic layer deposition process to a thickness of about 10 nm to about 1.5 μm, wherein the transition metal-containing layer comprises a material selected from a group consisting of tantalum, titanium, niobium, alloys thereof, alloys of tantalum or titanium with a rare earth metal, and combinations thereof,
- wherein the halogen resistant coating conformally covers the surface.
1 more element
A method comprising:
- depositing a halogen resistant coating on an inside surface of a gas line or a surface of a trough using an atomic layer deposition process, comprising:
- as a first step of the atomic layer deposition process, depositing a hydrogen seed layer on the surface using atomic layer deposition to a thickness of about 1 nm to about 1.5 μm;
- and
- depositing a transition metal-containing layer on the hydrogen seed layer using the atomic layer deposition process to a thickness of about 10 nm to about 1.5 μm, wherein the transition metal-containing layer comprises a material selected from a group consisting of tantalum, titanium, niobium, alloys thereof, alloys of tantalum or titanium with a rare earth metal and combinations thereof,
- wherein the gas line has an aspect ratio of length to diameter of about 3:1 to about 300:1 or the trough has an aspect ratio of depth to width of about 3:1 to about 300:1.
2 more elements
A method comprising:
- depositing a halogen resistant coating on a surface of a portion of a chamber component using an atomic layer deposition process, wherein the portion has an aspect ratio of length to diameter or depth to width of about 10:1 to about 300:1, comprising:
- depositing hydrogen radicals onto the surface to form a hydrogen seed layer on the surface using atomic layer deposition to a thickness of about 1 nm to about 1.5 μm, wherein the hydrogen seed layer is used as an adhesion layer;
- depositing a transition metal-containing layer on the hydrogen seed layer using the atomic layer deposition process to a thickness of about 10 nm to about 1.5 μm, wherein the transition metal-containing layer comprises a transition metal material selected from a group consisting of tantalum, titanium, niobium, alloys thereof, alloys of tantalum or titanium with a first rare-earth metal and combinations thereof;
- and
- forming an intermediate layer between the hydrogen seed layer and the transition metal-containing layer, wherein the intermediate layer comprises an interdiffused solid state phase.
2 more elements
Dependencies are inferred from the claim text.