Light detection device, superconducting nanowire single photon detector comprising the same and method for manufacturing the same

A method of manufacturing a light detection device comprising:

• providing a substrate;
• providing a light reflecting portion on the substrate;
• providing a light detection portion directly on the light reflection portion;
• providing an anti-reflection portion provided on the light reflection portion to cover the light detection portion;
• removing each of a first outer periphery of the light reflection portion and a second outer periphery of the anti-reflection portion, and
• providing a hard mask formed to correspond to the removed first outer periphery, positioned on the substrate, and spaced apart from the light reflecting portion to surround the light reflecting portion;
• the hard mask being a continuous layer;
• wherein the providing the hard mask comprises:
• providing an electron beam resistance layer covering a portion except for a predetermined region formed to be spaced apart from an edge of the light reflection portion and a surface of the substrate and exposing a substrate corresponding to the predetermined region;
• depositing a mask layer covering the predetermined region and the electron beam resistance layer;
• the mask layer being in direct contact with the electron beam resistance layer and with the substrate in the predetermined region;
• removing the electron beam resistance layer and the mask layer formed on the electron beam resistance layer to provide a remaining mask layer in the predetermined region;
• forming a photoresist layer partially covering the remaining mask layer while aligning with the remaining mask layer and exposing a third outer periphery of the remaining mask layer to the outside;
• removing a portion of the substrate exposed to the outside of the third outer periphery;
• and
• removing the photoresist layer to provide the hard mask;
• wherein an upper portion of the third outer periphery is etched and then a height of the third outer periphery is smaller than an average height of the remaining mask layer in the removing a portion of the substrate exposed to the outside of the third outer periphery.