Logic gate device

A logic gate device comprises:

• a gate electrode;
• a gate insulating layer, locating on the gate electrode;
• a bottom electrode, locating on a surface of the gate insulating layer away from the gate electrode;
• a two-dimensional semiconductor layer, locating on a surface of the bottom electrode away from the gate insulating layer and simultaneously covers the first surface of the gate insulating layer;
• a first top electrode and a second top electrode, locating on a surface of the two-dimensional semiconductor layer away from the gate insulating layer;
• wherein the bottom electrode, the two-dimensional semiconductor layer, and the gate insulating layer form air gaps, and the air gaps are distributed at opposite sides of the bottom electrode, the gate electrode is configured to connect a gate voltage, the first top electrode and the second top electrode are configured to connect with a signal input terminal, and the bottom electrode is configured to connect with a signal output terminal under a working voltage.