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US 12,495,544 B2Granted
Semiconductor structure and method for forming same
AssigneeChangxin Memory Technologies, Inc.
InventorsPeimeng Wang, Ning Xi
Life of this patent
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Abstract
A semiconductor structure formed by the method for forming the semiconductor structure includes: a substrate, on which an insulating layer is formed; metal conductive layers located on the insulating layer; and an isolation structure located between two adjacent ones of the metal conductive layers.
Claims12
A method for forming a semiconductor structure, comprising:
- providing a substrate, wherein an insulating layer, an initial metal conductive layer, an initial protective layer and a mask layer stacked in sequence are formed on the substrate, and the initial protective layer comprises a nitrogen silicon compound layer;
- based on a patterned mask layer, etching the initial protective layer and the initial metal conductive layer with an oxygen source gas being used as an etching gas to form metal conductive layers and protective layers located on the metal conductive layers;
- ashing the patterned mask layer with an oxygen source gas being used as an etching gas to remove the patterned mask layer, wherein a by-product is formed during the etching and the ashing and mainly includes a metal oxide;
- cleaning out the by-product with an alkaline corrosive liquid to expose the protective layers;
- and
- forming an isolation structure between two adjacent ones of the metal conductive layers.
3 more elements
Dependencies are inferred from the claim text.