Solid-state imaging device and method of controlling solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorsTaiichiro Watanabe, Tetsuji Yamaguchi, Yusuke Sato, Fumihiko Koga
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Abstract
Provided is a solid-state imaging device that includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.
Claims10
A method of controlling a light detecting device, the method comprising:
- turning on a gate of a reset transistor during a charge non-accumulation period;
- and
- turning off the gate of the reset transistor during a charge accumulation period, wherein
- the light detecting device comprises a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode,
- the light detecting device further comprises an insulating layer between the first electrode and the photoelectric conversion layer,
- the first electrode comprises a charge readout electrode and an accumulation electrode, and
- the charge readout electrode is electrically coupled with the photoelectric conversion layer via an opening in the insulating layer.
Dependencies are inferred from the claim text.