Traveling wave kinetic inductance parametric amplifier
AssigneeYissum Research Development Company of the Hebrew University of Jerusalem
InventorsNadav Katz, Samuel Goldstein
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Abstract
A traveling wave kinetic inductance parametric amplifier is presented. The amplifier includes a microstrip structure defining a parallel plate capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer. The first electrically conductive layer is made of superconducting material composition having desirably high kinetic inductance and being configured as a nanoscale thickness strip.
Claims21
A traveling wave kinetic inductance parametric amplifier comprising:
- a microstrip structure defining a parallel plate capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer, the first electrically conductive layer being made of superconducting material composition having desirably high kinetic inductance and being configured as a nanoscale thickness strip, wherein said nanoscale thickness strip has a pattern of width variation along the strip.
A traveling wave kinetic inductance parametric amplifier comprising:
- a microstrip structure defining a capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer, the first electrically conductive layer being made of superconducting material composition having desirably high kinetic inductance and is configured as a nanoscale thickness strip having a pattern of strip width variation, said capacitor element being configured with desirably high capacitance per unit length of said strip providing impedance of said microstrip structure matching 50 Ohm.
A traveling wave kinetic inductance parametric amplifier comprising:
- a microstrip structure defining a capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer, the first electrically conductive layer being made of superconducting material composition having desirably high kinetic inductance and being configured as a nanoscale thickness strip having a pattern of width variation along the strip, and said capacitor element being configured with desirably high capacitance per unit length of said strip, thereby providing impedance of said microstrip structure matching 50 Ohm at a length of said strip substantially not exceeding 10 cm.
A traveling wave kinetic inductance parametric amplifier comprising:
- a microstrip structure defining a parallel plate capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer, the first electrically conductive layer being made of superconducting material composition of WSi having desirably high kinetic inductance and being configured as a nanoscale thickness strip having a pattern of width variation along the strip, and said dielectric spacer layer being a silicon layer.
A traveling wave kinetic inductance parametric amplifier comprising:
- a microstrip structure defining a parallel plate capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer, the first electrically conductive layer being made of superconducting material composition having desirably high kinetic inductance and being configured as a nanoscale thickness strip, wherein said microstrip structure is configured and operable with a gain of at least 10 dB, thereby enabling to amplify essentially weak input data signals through non-linear interaction with a pump signal, said non-linear interaction being either one of three-wave mixing mode and four-wave mixing mode.
A traveling wave kinetic inductance parametric amplifier comprising:
- a microstrip structure defining a parallel plate capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer, the first electrically conductive layer being made of superconducting material composition having desirably high kinetic inductance and being configured as a nanoscale thickness strip, wherein said microstrip structure is configured and operable with an amplification gain bandwidth of 1 GHz.
Dependencies are inferred from the claim text.