High-speed, high-power operational amplifier and linear amplitude modulator

Abstract

A high-speed, high-power gallium-nitride-based (GaN-based) operational amplifier (“opamp”) and a GaN-based high-power, wideband linear amplitude modulator (LAM) that may be used to implement a dynamic power supply (DPS) in a high-power, wideband polar modulator are disclosed. The high-speed, high-power GaN-based opamp comprises an input differential amplifier having an input-DC-offset-minimizing circuit and a class AB push-pull output stage including an efficiency-enhancing source follower control circuit that provides for a unique and modified form of buffered frequency compensation. The GaN-based high-power, wideband LAM comprises an input differential amplifier having an input-DC-offset-minimizing circuit, similar to that used in the GaN-based opamp, and a current boost circuit that maintains a source follower in an output stage of the LAM in saturation during times the LAM's output voltage is low.

Dependencies are inferred from the claim text.