Electron source, electron beam device, and method for manufacturing electron source
AssigneeHitachi High-Tech Corporation
InventorsToshiaki Kusunoki, Tomihiro Hashizume, Noriaki Arai, Keigo Kasuya
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AssigneeHitachi High-Tech Corporation
InventorsToshiaki Kusunoki, Tomihiro Hashizume, Noriaki Arai, Keigo Kasuya
Estimating the term…
In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the protrusion (40) and has a diameter decreasing toward the protrusion (40); and a body (42) that supports the shank (41), in which the protrusion (40), the shank (41), and the body (42) are each made of a hexaboride single crystal, and a part including the shank (41) and the body (42) excluding the protrusion (40) is covered with a material having a work function higher than that of the hexaboride single crystal.
An electron source comprising:
A method for manufacturing an electron source, the electron source including a tip substrate that includes a protrusion configured to emit an electron when an electric field is generated, a shank that supports the protrusion and has a diameter decreasing toward the protrusion, and a body that supports the shank, wherein the protrusion, the shank, and the body are each made of a hexaboride single crystal, the method comprising:
Dependencies are inferred from the claim text.