Fuse element, fuse device and protection device
AssigneeDexerials Corporation
InventorYoshihiro Yoneda
Life of this patent
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Abstract
A fuse element (10) includes a low-melting-point metal layer (11), a high-melting-point metal layer (12) laminated on at least one surface of the low-melting-point metal layer (11), and an intermediate layer (13) disposed between the low-melting-point metal layer (11) and the high-melting-point metal layer (12), in which the high-melting-point metal layer (12) and the intermediate layer (13) are layers formed of a metal which is melted by a molten material of the low-melting-point metal layer (11), and the intermediate layer (13) has a higher ionization tendency than an ionization tendency of the high-melting-point metal layer (12).
Claims8
A fuse element comprising:
- a low-melting-point metal layer;
- a high-melting-point metal layer laminated around the low-melting-point metal layer;
- and
- an intermediate layer disposed between the low-melting-point metal layer and the high-melting-point metal layer,
- wherein the high-melting-point metal layer and the intermediate layer are layers formed of a metal which is melted by a molten material of the low-melting-point metal layer,
- wherein the low-melting-point metal layer is formed of tin or a tin alloy,
- wherein a melting point of a material constituting the low-melting-point metal layer is 200° C. or higher and 235° C. or lower,
- wherein the intermediate layer is formed of copper, or an alloy of copper,
- wherein a melting point of a material constituting the intermediate layer is 950° C. or higher and 1600° C. or lower,
- wherein the high-melting-point metal layer is formed of silver or a silver alloy,
- wherein a melting point of a material constituting the high-melting-point metal layer is 300° C. or higher and 1000° C. or lower,
- wherein the intermediate layer has a higher ionization tendency than an ionization tendency of the high-melting-point metal layer,
- wherein the intermediate layer has a lower ionization tendency than that of the low-melting-point metal layer,
- wherein the high-melting-point metal layer and the intermediate layer are layers formed by a plating method,
- wherein the intermediate layer is formed by a strike plating method,
- wherein the low-melting-point metal layer is covered with an outer shell which is formed of the high-melting-point metal layer and the intermediate layer,
- a film thickness of the low-melting-point metal layer is 30 μm or more,
- a film thickness of the high-melting-point metal layer is 1 μm or more,
- a film thickness of the intermediate layer is within a range of 0.01 μm or more and 1 μm or less,
- wherein the low-melting-point metal layer is melted when an overcurrent occurs, and a molten material of the low-melting-point metal layer melts the high-melting-point metal layer and the intermediate layer to fuse the fuse element,
- wherein reflow of the fuse element is performed when a fuse device or a protection device which include the fuse element is manufactured,
- wherein the melting point of a material constituting the low-melting-point metal layer is lower than a reflow temperature of the reflow, and
- wherein a rigidity of the outer shell maintains shape of the fuse element which has the laminated layers, when heating is performed for the reflow and the low-melting-point metal layer is melted by the heating.
A fuse element comprising:
- a low-melting-point metal layer;
- a high-melting-point metal layer laminated around the low-melting-point metal layer;
- and
- an intermediate layer disposed between the low-melting-point metal layer and the high-melting-point metal layer,
- wherein the high-melting-point metal layer and the intermediate layer are layers formed of a metal which is melted by a molten material of the low-melting-point metal layer,
- wherein the low-melting-point metal layer is formed of tin or a tin alloy,
- wherein a melting point of a material constituting the low-melting-point metal layer is 200° C. or higher and 235° C. or lower,
- wherein the intermediate layer is formed of copper or an alloy copper,
- wherein a melting point of a material constituting the intermediate layer is 950° C. or higher and 1600° C. or lower,
- wherein the high-melting-point metal layer is formed of silver or a silver alloy,
- wherein a melting point of a material constituting the high-melting-point metal layer is 300° C. or higher and 1000° C. or lower,
- wherein the intermediate layer has a higher ionization tendency than an ionization tendency of the high-melting-point metal layer,
- the intermediate layer has a lower ionization tendency than that of the low-melting-point metal layer,
- wherein the high-melting-point metal layer and the intermediate layer are layers formed by a plating method,
- wherein the intermediate layer is formed by a strike plating method,
- wherein the low-melting-point metal layer is covered with an outer shell which is formed of the high-melting-point metal layer and the intermediate layer,
- wherein a film thickness of the low-melting-point metal layer is 30 μm or more,
- wherein a film thickness of the high-melting-point metal layer is 1 μm or more,
- wherein a film thickness of the intermediate layer is within a range of 0.01 μm or more and 1 μm or less,
- wherein the intermediate layer has a higher melting point than a melting point of the high-melting-point metal layer, and
- wherein at least one of the low-melting-point metal layer, the intermediate layer, and the high-melting-point metal layer is made of alloy.
Dependencies are inferred from the claim text.