Overlay measurement method, semiconductor device manufacturing method using the same, and overlay measurement apparatus

An overlay measurement method comprising:

• performing, based on a fixed position, an absolute measurement of a position of a first overlay mark, which is formed on a first layer of a plurality of layers on a first semiconductor substrate by using a deep ultraviolet (DUV) apparatus;
• first-feeding a result of the absolute measurement of the position of the first overlay mark back to the DUV apparatus;
• performing an absolute measurement of a position of a second overlay mark, which is formed on an nth layer of the plurality of layers, which is an uppermost layer on the first semiconductor substrate, by using an extreme ultraviolet (EUV) apparatus;
• and
• second-feeding a result of the absolute measurement of the position of the second overlay mark to the DUV apparatus.

A method of manufacturing a semiconductor device, the method comprising:

• forming a first overlay mark on a first layer of a plurality of layers on a first semiconductor substrate by using a deep ultraviolet (DUV) apparatus;
• performing an absolute measurement of a position of the first overlay mark, based on a fixed position;
• first-feeding a result of the absolute measurement of the position of the first overlay mark back to the DUV apparatus;
• forming a second overlay mark on an nth layer of the plurality of layers, which is the uppermost layer on the first semiconductor substrate, by using an extreme ultraviolet (EUV) apparatus;
• performing an absolute measurement of a position of the second overlay mark;
• and
• second-feeding a result of the absolute measurement of the position of the second overlay mark back to the DUV apparatus.