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US 12,493,245 B2Granted
Enhancing efficiency of resist patterning
AssigneeOrbotech Ltd.
InventorsOfer Fogel, Manuela Hod, Uri Gold, Ronen Yogev
Life of this patent
Estimating the term…
Abstract
A direct imaging system includes an ultraviolet radiation source, which is configured to irradiate a first area, having a first width, of a layer of a photoreactive material on a substrate with patterned ultraviolet radiation. A thermal energy source is configured to heat a second area of the layer of the photoreactive material while the ultraviolet radiation source irradiates the first area. The second area contains a part of the first area and having a second width less than the first width.
Claims13
A direct imaging system, comprising:
- an ultraviolet radiation source, which is configured to irradiate a first area, having a first width, of a layer of a photoreactive material on a substrate with a pattern of ultraviolet radiation;
- a thermal energy source, which is configured to heat a second area of the layer of the photoreactive material while the ultraviolet radiation source irradiates the first area, the second area containing a part of the first area and having a second width less than the first width, wherein the thermal energy source comprises a source of infrared radiation and projection optics configured to project infrared radiation over the second area, wherein the first area is rectangular, having a height perpendicular to the first width, wherein the second area extends across the height of the first area, thereby defining an elongated region that is heated by the thermal energy source, wherein the infrared radiation from the thermal energy source is shaped to fit the elongated region, and wherein the source of infrared radiation comprises only one infrared laser;
- and
- a motion assembly, which is configured to scan at least the second area across the layer of the photoreactive material.
1 more element
A method for direct imaging, comprising:
- irradiating a first area, having a first width, of a layer of a photoreactive material on a substrate with a pattern of ultraviolet radiation;
- applying heat to a second area of the layer of the photoreactive material while the first area is irradiated with the pattern of ultraviolet radiation, the second area containing a part of the first area and having a second width less than the first width, wherein applying the heat comprises projecting infrared radiation over the second area using one infrared laser, wherein the first area is rectangular, having a height perpendicular to the first width, and wherein the second area extends across the height of the first area, thereby defining an elongated region that is heated by a thermal energy source, wherein the infrared radiation is shaped to fit the elongated region, and wherein the source of infrared radiation comprises only the one infrared laser;
- and
- scanning at least the second area across the layer of the photoreactive material.
1 more element
Dependencies are inferred from the claim text.