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US 12,490,533 B2Granted
Solid-state image sensor filter and solid-state image sensor
AssigneeToppan Printing Co., Ltd.
InventorsReiko Iwata, Yuri Hirai, Kazushige Kitazawa, Tadatoshi Maeda
Life of this patent
Estimating the term…
Abstract
A solid-state image sensor filter includes: a light-incident surface on which light is incident; an infrared filter located on a side of a photoelectric conversion element on which the light-incident surface is disposed; and a barrier layer located on a side of the infrared filter on which the light-incident surface is disposed, the barrier layer being provided to suppress transmission of an oxidation source to thereby prevent the infrared filter from being oxidized.
Claims12
A solid-state image sensor filter, comprising:
- a plurality of color microlenses having a light-incident surface and configured to collect light incident on the light-incident surface toward a plurality of photoelectric conversion elements, respectively;
- an infrared filter formed on an opposite side with respect to the light-incident surface of the plurality of color microlenses such that the infrared filter is configured to be positioned between the plurality of color microlenses and the plurality of photoelectric conversion elements and cover a plurality of color filters for the plurality of photoelectric conversion elements, respectively;
- and
- a barrier layer formed between the plurality of color microlenses and the infrared filter and having a thickness in a range of 10 nm to 500 nm such that the barrier layer is configured to cover the infrared filter and suppress transmission of an oxidation source that oxidizes the infrared filter and that the barrier layer has an oxygen transmittance of 5.0 cc/m2/day/atm or less and transmittance of 90% or more in a visible light range.
1 more element
A solid-state image sensor filter, comprising:
- a plurality of color microlenses having a light-incident surface and configured to collect light incident on the light-incident surface toward a plurality of photoelectric conversion elements, respectively;
- an infrared filter formed on an opposite side with respect to the light-incident surface of the plurality of color microlenses such that the infrared filter is configured to be positioned between the plurality of color microlenses and the plurality of photoelectric conversion elements and cover a plurality of color filters for the plurality of photoelectric conversion elements, respectively;
- and
- a barrier layer comprising a laminate structure and formed between the plurality of color microlenses and the infrared filter such that the barrier layer is configured to cover the infrared filter and has a thickness in a range of 10 nm to 500 nm, an oxygen transmittance of 5.0 cc/m2/day/atm or less and transmittance of 90% or more in a visible light range.
1 more element
Dependencies are inferred from the claim text.