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US 12,490,512 B2Granted
High voltage nitride semiconductor device
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsHiroto Yamagiwa, Manabu Yanagihara, Takahiro Sato, Masahiro Hikita
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Abstract
A semiconductor device includes third active regions that connect two finger-end portions of field effect transistors (FETs) spaced apart from each other, and includes, above the third active regions, portions of a third nitride semiconductor layer that includes P-type impurities.
Claims19
A semiconductor device comprising:
- a substrate;
- a first nitride semiconductor layer provided above the substrate;
- a second nitride semiconductor layer provided above the first nitride semiconductor layer, and having a band gap greater than a band gap of the first nitride semiconductor layer;
- a first field effect transistor;
- and
- a second field effect transistor,
- wherein in a plan view of the substrate, the first nitride semiconductor layer and the second nitride semiconductor layer include:
- a first active region and a second active region in each of which a two-dimensional electron gas is generated;
- and
- an inactive region in which no two-dimensional electron gas is generated,
- the first field effect transistor is included in the first active region in the plan view of the substrate, and includes:
- a first source electrode and a first drain electrode that extend in a first direction in the plan view of the substrate;
- a portion of a first P-type nitride semiconductor layer provided between the first source electrode and the first drain electrode and extending in the first direction in the plan view of the substrate;
- and
- a first gate electrode provided above the portion of the first P-type nitride semiconductor layer,
- the second field effect transistor is included in the second active region in the plan view of the substrate, and includes:
- a second source electrode and a second drain electrode that extend in the first direction in the plan view of the substrate;
- a portion of a second P-type nitride semiconductor layer provided between the second source electrode and the second drain electrode and extending in the first direction in the plan view of the substrate;
- and
- a second gate electrode provided above the portion of the second P-type nitride semiconductor layer,
- the first nitride semiconductor layer and the second nitride semiconductor layer further include third active regions in each of which a two-dimensional electron gas is generated, the third active regions being connected to the first active region and the second active region in a second direction different from the first direction in the plan view of the substrate, at two end portions of each of the first active region and the second active region in the first direction,
- the third active regions each include a portion of a third nitride semiconductor layer extending in the second direction and including P-type impurities, and
- the portion of the first P-type nitride semiconductor layer and the portion of the second P-type nitride semiconductor layer are connected to each other via the portions of the third nitride semiconductor layer, in the first active region, the second active region, and the third active regions.
20 more elements
A semiconductor device comprising:
- a substrate;
- a first nitride semiconductor layer provided above the substrate;
- a second nitride semiconductor layer provided above the first nitride semiconductor layer, and having a band gap greater than a band gap of the first nitride semiconductor layer;
- a first double-gate field effect transistor;
- a second double-gate field effect transistor;
- and
- a third double-gate field effect transistor,
- wherein in a plan view of the substrate, the first nitride semiconductor layer and the second nitride semiconductor layer include:
- a first active region, a second active region, and a third active region in each of which a two-dimensional electron gas is generated;
- and
- an inactive region in which no two-dimensional electron gas is generated, the first double-gate field effect transistor is included in the first active region, and includes:
- a first source electrode and a second source electrode that extend in a first direction in the plan view of the substrate;
- a portion of a first P-type nitride semiconductor layer and a portion of a second P-type nitride semiconductor layer separately provided between the first source electrode and the second source electrode and extending in the first direction in the plan view of the substrate;
- a first gate electrode provided above the portion of the first P-type nitride semiconductor layer;
- and
- a second gate electrode provided above the portion of the second P-type nitride semiconductor layer,
- the second double-gate field effect transistor is included in the second active region, and includes:
- a third source electrode and a fourth source electrode that extend in the first direction in the plan view of the substrate;
- a portion of a third P-type nitride semiconductor layer and a portion of a fourth P-type nitride semiconductor layer separately provided between the third source electrode and the fourth source electrode and extending in the first direction in the plan view of the substrate;
- a third gate electrode provided above the portion of the third P-type nitride semiconductor layer;
- and
- a fourth gate electrode provided above the portion of the fourth P-type nitride semiconductor layer,
- the third double-gate field effect transistor is included in the third active region, and includes:
- a fifth source electrode and a sixth source electrode that extend in the first direction in the plan view of the substrate;
- a portion of a fifth P-type nitride semiconductor layer and a portion of a sixth P-type nitride semiconductor layer separately provided between the fifth source electrode and the sixth source electrode and extending in the first direction in the plan view of the substrate;
- a fifth gate electrode provided above the portion of the fourth P-type nitride semiconductor layer;
- and
- a sixth gate electrode provided above the portion of the sixth P-type nitride semiconductor layer,
- the first nitride semiconductor layer and the second nitride semiconductor layer further include fourth active regions at two end portions of each of the first active region and the second active region in the first direction in the plan view of the substrate, the fourth active regions being regions in each of which a two-dimensional electron gas is generated, being connected to the first active region and the second active region, and each being in a quadrilateral shape that extends in a second direction different from the first direction,
- the fourth active regions each include a portion of a third nitride semiconductor layer extending in the second direction in the plan view of the substrate and including P-type impurities,
- the portion of the second P-type nitride semiconductor layer and the portion of the fourth P-type nitride semiconductor layer are connected to each other via the portions of the third nitride semiconductor layer, in the first active region, the second active region, and the fourth active regions,
- the first nitride semiconductor layer and the second nitride semiconductor layer further include fifth active regions at two end portions of each of the second active region and the third active region in the first direction in the plan view of the substrate, the fifth active regions being regions in each of which a two-dimensional electron gas is generated, being connected to the second active region and the third active region, and extending in the second direction,
- the fifth active regions each include a portion of a fourth nitride semiconductor layer extending in the second direction in the plan view of the substrate, and including P-type impurities, and
- the portion of the third P-type nitride semiconductor layer and the portion of the fifth P-type nitride semiconductor layer are connected to each other via the portions of the fourth nitride semiconductor layer, in the second active region, the third active region, and the fifth active regions.
31 more elements
Dependencies are inferred from the claim text.