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US 12,490,500 B2Granted
Semiconductor device and processes for making same
AssigneeDiodes Incorporated
InventorsKuo-Liang Chao, Pin-Hao Huang
Life of this patent
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Abstract
The disclosure provides a semiconductor package having an isolation structure comprising an isolation trench filled with dielectric material, where the isolation structure traverses the thickness of the isolated semiconductor dies.
Claims20
A semiconductor device, comprising:
- at least two semiconductor dies, each of the at least two semiconductor dies includes a semiconductor substrate and an epitaxial layer formed on the semiconductor substrate;
- a layer of a first dielectric material disposed on a top surface of the epitaxial layer;
- and
- an isolation structure electrically isolating two semiconductor dies of the at least two semiconductor dies, the isolation structure comprising an isolation trench extended from the top surface of the epitaxial layer into the semiconductor substrate, and the isolation trench being filled with the first dielectric material and covered by the layer of the first dielectric material;
- wherein the semiconductor device further comprises a channel within the at least two semiconductor dies, and a layer of metal is plated in the channel and on a bottom surface of the semiconductor substrate.
2 more elements
A semiconductor device, comprising:
- two semiconductor dies adjacent to each other, each of the two semiconductor dies including a semiconductor substrate and an epitaxial layer formed on the semiconductor substrate;
- a layer of a first dielectric material disposed on a bottom surface of the semiconductor substrate;
- and
- an isolation structure between the two semiconductor dies and electrically isolating the two semiconductor dies from each other, the isolation structure comprising a first isolation trench extended from the bottom surface of the semiconductor substrate into the semiconductor substrate, and the first isolation trench being filled with the first dielectric material and covered by the layer of the first dielectric material;
- wherein the isolation structure comprises:
- a first isolation structure comprising the first isolation trench filled with the first dielectric material;
- and
- a second isolation structure connected to the first isolation structure along a thickness of the two semiconductor dies, the second isolation structure comprising a second isolation trench filled with a second dielectric material, and the second isolation trench extending from a top surface of the epitaxial layer into the semiconductor substrate;
- wherein the first isolation trench has a width different from that of the second isolation trench.
6 more elements
A semiconductor device, comprising:
- two semiconductor dies adjacent to each other, each of the two semiconductor dies including a semiconductor substrate and an epitaxial layer formed on the semiconductor substrate;
- an isolation structure between the two semiconductor dies and electrically isolating the two semiconductor dies from each other, the isolation structure comprising:
- a first isolation trench extending from a top surface of the epitaxial layer into the semiconductor substrate;
- and
- a second isolation trench extending from a bottom surface of the semiconductor substrate into the semiconductor substrate and connected to the first isolation trench, wherein the first isolation trench is filled with a first dielectric material and the second isolation trench is filled with a second dielectric material.
2 more elements
Dependencies are inferred from the claim text.