Solid-state imaging device, imaging device, processing method in solid-state imaging device, and processing method in imaging device

An imaging device, comprising:

• a solid-state imaging device including:
• a plurality of pixels, each of the plurality of pixels including:
• a photoelectric conversion section configured to generate a charge based on an amount of received light;
• and
• a capacitor configured to share accumulation of the generated charge with the photoelectric conversion section;
• a storage section configured to store fixed pattern noise data indicating a noise signal level of each of the plurality of pixels;
• and
• an arithmetic section configured to:
• calculate the noise signal level based on an exposure period of the plurality of pixels, a temperature of the solid-state imaging device, and the stored fixed pattern noise data;
• and
• subtract the noise signal level from a pixel signal level, wherein
• the noise signal level is based on noise in the capacitor due to the temperature, and
• the pixel signal level is based on the generated charge accumulated in the photoelectric conversion section and the capacitor.

A processing method in a solid-state imaging device, the solid-state imaging device including

• a plurality of pixels, each of the plurality of pixels including:
• a photoelectric conversion section configured to generate a charge based on an amount of received light;
• and
• a capacitor configured to share accumulation of the generated charge with the photoelectric conversion section,
• the processing method, comprising:
• storing fixed pattern noise data indicating a noise signal level of each of the plurality of pixels;
• calculating the noise signal level based on an exposure period of the plurality of pixels, a temperature of the solid-state imaging device, and the stored fixed pattern noise data;
• and
• subtracting the noise signal level from a pixel signal level, wherein
• the noise signal level is based on noise in the capacitor due to the temperature, and
• the pixel signal level is based on the generated charge accumulated in the photoelectric conversion section and the capacitor.

A non-transitory computer-readable medium having stored thereon, computer-executable instructions which, when executed by a processor in a solid-state imaging device, the solid-state imaging device including a plurality of pixels, each of the plurality of pixels including:

• a photoelectric conversion section configured to generate a charge based on an amount of received light;
• and a capacitor configured to share accumulation of the generated charge with the photoelectric conversion section, cause the processor to execute operations, the operations comprising:
• storing fixed pattern noise data indicating a noise signal level of each of the plurality of pixels;
• calculating the noise signal level based on an exposure period of the plurality of pixels, a temperature of the solid-state imaging device, and the stored fixed pattern noise data;
• and
• subtracting the noise signal level from a pixel signal level, wherein
• the noise signal level is based on noise in the capacitor due to the temperature, and
• the pixel signal level is based on the generated charge accumulated in the photoelectric conversion section and the capacitor.

A processing method in an imaging device, the imaging device including a solid-state imaging device, the solid-state imaging device including a plurality of pixels, each of the plurality of pixels including:

• a photoelectric conversion section configured to generate a charge based on an amount of received light;
• and
• a capacitor configured to share accumulation of the generated charge with the photoelectric conversion section,
• the processing method, comprising:
• storing fixed pattern noise data indicating a noise signal level of each of the plurality of pixels;
• calculating the noise signal level based on an exposure period of the plurality of pixels, a temperature of the solid-state imaging device, and the stored fixed pattern noise data;
• and
• subtracting the noise signal level from a pixel signal level, wherein
• the noise signal level is based on noise in the capacitor due to the temperature, and
• the pixel signal level is based on the generated charge accumulated in the photoelectric conversion section and the capacitor.

A non-transitory computer-readable medium having stored thereon, computer-executable instructions which, when executed by a processor in an imaging device, the imaging device including a solid-state imaging device, the solid-state imaging device including a plurality of pixels, each of the plurality of pixels including:

• a photoelectric conversion section configured to generate a charge based on an amount of received light;
• and a capacitor configured to share accumulation of the generated charge with the photoelectric conversion section, cause the processor to execute operations, the operations comprising:
• storing fixed pattern noise data indicating a noise signal level of each of the plurality of pixels;
• calculating the noise signal level based on an exposure period of the plurality of pixels, a temperature of the solid-state imaging device, and the stored fixed pattern noise data;
• and
• subtracting the noise signal level from a pixel signal level, wherein
• the noise signal level is based on noise in the capacitor due to the temperature, and
• the pixel signal level is based on the generated charge accumulated in the photoelectric conversion section and the capacitor.