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US 12,489,273 B2Granted
Vertical cavity surface emitting laser (VCSEL) emitter with guided-antiguided waveguide
AssigneeII-Vi Delaware, Inc.
InventorsEvgeny Zibik, Antoine Pissis, Stefano Tirelli
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Abstract
A vertical cavity surface emitting laser (VCSEL) device comprising a VCSEL emitter having a waveguide with a guided portion and an antiguided portion is disclosed. The guided and antiguided portions may select and confine a mode of the VCSEL emitter. The antiguided portion may also be used to coherently couple adjacent VCSEL emitters.
Claims18
A semiconductor device, comprising:
- an upper mirror;
- a lower mirror;
- and
- an active region and vertical cavity between the upper mirror and the lower mirror;
- wherein the vertical cavity defines a waveguide comprising a guided portion and an antiguided portion between the upper mirror and the lower mirror;
- wherein the guided portion comprises a tunnel junction aperture;
- and
- wherein the antiguided portion comprises a p-n blocking layer aperture.
5 more elements
A semiconductor device, comprising:
- an array of VCSEL emitters;
- wherein each VCSEL emitter of the array of VCSEL emitters comprises:
- an upper mirror;
- a lower mirror;
- and
- an active region and vertical cavity between the upper mirror and the lower mirror;
- and
- wherein the vertical cavity defines a waveguide comprising a guided portion between the active region and the upper mirror and an antiguided portion between the active region and the lower mirror;
- wherein the guided portion of each VCSEL emitter comprises a tunnel junction aperture;
- and
- wherein the antiguided portion of each VCSEL emitter comprises a p-n blocking layer aperture.
8 more elements
A method of forming a semiconductor device, the method comprising:
- growing, via a first epitaxial process, a lower mirror on a top side of a substrate;
- growing, via the first epitaxial process, a p-n blocking layer on a top side of the lower mirror;
- forming an antiguided portion of a waveguide by etching, via a first lithographic process, the p-n blocking layer to form an aperture of the antiguided portion of the waveguide;
- growing, via a second epitaxial process, an active region over the antiguided portion of the waveguide;
- growing, via the second epitaxial process, a tunnel junction layer on a top side of the active region;
- forming a guided portion of the waveguide by etching, via a second lithographic process, the tunnel junction layer to form an aperture of the guided portion of the waveguide;
- and
- growing, via a third epitaxial process, an upper mirror over the guided portion of the waveguide.
5 more elements
Dependencies are inferred from the claim text.