Transmission line for millimeter wave band using vertical type PIN diode

A transmission line for a millimeter wave band using a vertical type pin diode, the transmission line comprising:

• a diode layer including the vertical type PIN diode and a first metal column of a same size as the vertical type PIN diode, the first metal column being disposed on an opposite side of the vertical type PIN diode with respect to a centerline of the diode layer;
• an upper signal application substrate located on the diode layer and including second metal columns configured to transfer a millimeter wave signal to the diode layer;
• a lower signal application substrate located under the diode layer;
• an upper bonding film configured to connect the diode layer to the upper signal application substrate;
• and
• a lower bonding film configured to connect the diode layer to the lower signal application substrate,
• wherein the upper bonding film comprises third metal columns electrically connected to the second metal columns of the upper signal application substrate, and first metal patterns configured to electrically connect the vertical type PIN diode and the first metal column of the diode layer to the third metal columns of the upper bonding film, respectively,
• wherein the lower bonding film comprises second metal patterns configured to electrically connect the vertical type PIN diode and the first metal column of the diode layer, and
• wherein the first metal patterns are disposed between the diode layer and the upper bonding film, and the second metal patterns are disposed between the diode layer and the lower bonding film.