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US 12,489,119 B2Granted
Materials and methods of manufacture
AssigneeManufacturing Systems Limited
InventorsAshton Cyril Partridge, Ali Hosseini, Andrew Leo Haynes
Life of this patent
Estimating the term…
Abstract
An array includes a support substrate, surface structures protruding from a surface of the support substrate formed from or coated with a first material, a second material deposited on at least some of the surface structures such that the second material is in contact with the first material; and wherein the first material, the second material or the first and second material is conducting or semiconducting, and wherein the first and second material at least partially form a composite.
Claims37
A catalyst array comprising:
- a support substrate;
- a plurality of surface structures protruding from a surface of the support substrate formed from or coated with a first material, wherein the plurality of surface structures comprise sharp edges and/or sharp apices;
- a second material on at least some of the plurality of surface structures such that the second material is in contact with the first material;
- and
- wherein the first material, the second material or the first material and the second material are conducting or semiconducting;
- wherein the first and second material at least partially form a composite, the composite formed at a higher density at the sharp edges and/or the sharp apices of the plurality of surface structures than on the remaining surfaces of the plurality surface structures.
3 more elements
A method of forming a catalyst array, the method comprising:
- applying a current between a first electrode and a second electrode in a conductive fluid;
- the first electrode comprising:
- a support substrate;
- a plurality of surface structures protruding from a surface of the support substrate formed from or coated with a first material, wherein the plurality of surface structures comprise sharp edges and/or sharp apices;
- and
- a second material on at least some of the plurality of surface structures in contact with the first material;
- wherein:
- the first material, the second material or the first material and the second material are conducting or semiconducting;
- and
- wherein the current density applied is sufficient to form a composite at least at the interface of the first material and second material, wherein the composite is formed at a higher density at the sharp edges and/or the sharp apices of the plurality of surface structures than on the remaining surfaces of the plurality surface structures.
7 more elements
Dependencies are inferred from the claim text.