Metal nanoparticles in an amorphous bonding layer between a device substrate and carrier substrate

A method for manufacturing a semiconductor structure, comprising:

• forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, the first bonding layer including a first bonding sub-layer disposed on the device substrate and a second bonding sub-layer disposed on the first bonding sub-layer opposite to the semiconductor device, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of first metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state;
• forming a second bonding layer on a carrier substrate, the second bonding layer including a first bonding sub-layer disposed on the carrier substrate and a second bonding sub-layer disposed on the first bonding sub-layer of the second bonding layer opposite to the carrier substrate, the first bonding sub-layer of the second bonding layer including a third metal oxide material in an amorphous state and a plurality of second metal nanoparticles, the second bonding sub-layer of the second bonding layer including a fourth metal oxide material in an amorphous state;
• conducting a surface modification process on the first bonding layer and the second bonding layer;
• bonding the device substrate and the carrier substrate to each other through the first bonding layer and the second bonding layer;
• and
• annealing the first bonding layer and the second bonding layer so as to convert the first metal oxide material, the second metal oxide material, the third metal oxide material, and the fourth metal oxide material from the amorphous state to a crystalline state.

A method for manufacturing a semiconductor structure, comprising:

• forming a first bonding layer on a first substrate formed with a semiconductor device so as to cover the semiconductor device, the first bonding layer including a first bonding sub-layer disposed on the first substrate and a second bonding sub-layer disposed on the first bonding sub-layer opposite to the semiconductor device, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state;
• forming a second bonding layer on a second substrate, the second bonding layer including a third metal oxide material in an amorphous state;
• bonding the first substrate and the second substrate to each other through the first bonding layer and the second bonding layer;
• and
• annealing the first bonding layer and the second bonding layer so as to convert the first metal oxide material, the second metal oxide material, and the third metal oxide material from the amorphous state to a crystalline state.