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US 12,489,058 B2Granted
Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring
AssigneeSamsung Electronics Co., Ltd.
InventorsJoungeun Yoo, Youngjae Kang, Duseop Yoon
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Abstract
Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.
Claims20
A semiconductor device comprising:
- a wiring including a boride-based compound containing boron and at least one metal selected from W, Mo, Ta, Nb, Cr, V, Fe, Ni, Co, Ti, Hf, U, Mg, Mn, Al, Dy, Er, La, Ce, In, or Ga,
- wherein an amount of boron in the boride-based compound ranges from 25 at. % to 88 at. %.
A semiconductor device comprising:
- a dielectric layer including a trench;
- a wiring in the trench, the wiring including a wiring material;
- and
- a barrier layer in the trench and surrounding the wiring, wherein
- the wiring material includes a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14,
- in the wiring material, an amount of boron in the boride-based compound ranges from 25 at. % to 88 at. %,
- a material of the barrier layer is different than the boride-based compound.
4 more elements
Dependencies are inferred from the claim text.