Back to results
US 12,488,985 B2Granted
Semiconductor laminate and method for manufacturing semiconductor laminate
AssigneeSumitomo Chemical Company, Limited
InventorsShota Kaneki, Hajime Fujikura, Taichiro Konno, Takeshi Kimura
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor laminate, comprising: a substrate; and a p-type layer provided above the substrate and comprising a group III nitride containing Mg, wherein C concentration in the p-type layer is less than 5×1015 cm−3, O concentration in the p-type layer is less than 5×1015 cm−3, Si concentration in the p-type layer is less than 1×1015 cm−3, and F concentration in the p-type layer is 1×1014 cm−3 or more.
Claims14
A semiconductor laminate, comprising:
- a substrate;
- and
- a p-type layer provided above the substrate and comprising a group III nitride containing Mg, wherein
- C concentration in the p-type layer is less than 5×1015 cm−3,
- O concentration in the p-type layer is less than 5×1015 cm−3,
- Si concentration in the p-type layer is less than 1×1015 cm−3, and
- F concentration in the p-type layer is 1×1014 cm−3 or more.
4 more elements
A semiconductor laminate, comprising:
- a substrate;
- a base layer provided on the substrate and comprising a group III nitride;
- and
- a p-type layer provided on the base layer and comprising a group III nitride containing Mg,
- wherein C concentration in each of the base layer and the p-type layer is less than 5×1015 cm−3,
- O concentration in each of the base layer and the p-type layer is less than 5×1015 cm−3,
- Si concentration in the p-type layer is less than 1×1015 cm−3, and
- a B/A ratio of Mg concentration comparing both sides in the vicinity of an interface between the base layer and the p-type layer is 100 or more,
- wherein the A is Mg concentration at a position 100 nm from the interface toward the base layer in a thickness direction, and
- the B is Mg concentration at a position 100 nm from the interface toward the p-type layer in a thickness direction.
7 more elements
Dependencies are inferred from the claim text.