Deposition apparatus

A magnetron sputtering apparatus for depositing material onto a substrate, comprising:

• a chamber comprising a substrate support and a target, wherein the substrate support is RF biased;
• a DC power supply;
• a rotating magnetron disposed on the chamber on an opposite side of the target from the substrate support, wherein the target is connected to the DC power supply, and wherein the rotating magnetron has a non-uniform plasma profile thereby generating high energy species at a minor erosion zone at a center of the target and at a major erosion zone away from the center of the target, wherein the major erosion zone surrounds an edge of the substrate on the substrate support;
• and
• only one thermally conductive grid comprising a plurality of cells, in which each cell comprises an aperture, wherein the cells have a uniform shape, distribution, width, and height across the thermally conductive grid, wherein the thermally conductive grid is electrically conductive and grounded, wherein a ratio of the height of the cells to the width of the apertures is in the range from 0.2 to 0.6, wherein the width of the apertures is from 10 mm to 25 mm, and wherein the height of each cell is 6 mm or less, and wherein the thermally conductive grid filters the high energy species generated at the major erosion zone, and
• wherein the grid is disposed about half way between an upper surface of the substrate support and the target and substantially parallel to the target, and the upper surface of the substrate support is positioned at a distance of 55 mm or less from a lower surface of the target and an upper surface of the grid is positioned at a distance from 18 mm to 26.5 mm from the lower surface of the target.