Resist material and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorJun Hatakeyama
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Abstract
The present invention is a resist material containing a quencher, where the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop a quencher that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity, low LWR, and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.
Claims20
A resist material comprising a quencher, wherein the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group.
Dependencies are inferred from the claim text.