Systems and methods for processing semiconductor wafers using front-end processed wafer edge geometry metrics

A method for processing semiconductor wafers, the method comprising:

• providing a first semiconductor wafer processed by a front-end process tool;
• obtaining measurement data of an edge profile of the first semiconductor wafer;
• determining an edge profile center point based on the measurement data;
• generating a raw height profile based on the measurement data and the edge profile center point;
• generating an ideal edge profile based on polynomial regression of the raw height profile;
• generating a Gapi edge profile of the first semiconductor wafer based on the raw height profile and the ideal edge profile;
• calculating a Gapi edge value of the first semiconductor wafer based on the Gapi edge profile;
• determining whether the Gapi edge value of the first semiconductor wafer is within a predetermined threshold;
• if the Gapi edge value of the first semiconductor wafer is not within the predetermined threshold:
• tuning the front-end process tool based on the Gapi edge profile of the first semiconductor wafer;
• and
• processing a second semiconductor wafer with the tuned front-end process tool;
• and
• if the Gapi edge value of the first semiconductor wafer is within the predetermined threshold, sorting the first semiconductor wafer for polishing.