Cleaning composition with molybdenum etching inhibitor

A method of removing post-CMP residues from a surface of a microelectronic device comprising a molybdenum material, the method comprising:

• i) contacting the surface of the microelectronic device with a removal composition comprising an aqueous base composition having a pH of greater than 10 comprising water and at least one of:
• an organic additive, a cleaning additive, a water-miscible organic solvent, and a pH adjustor,
• wherein the removal composition further comprises at least one molybdenum etching inhibitor selected from the group consisting of:
• (a) a pyridinium compound of Formula C:
• R9—(C5H5N+)—R8X− (C),
• wherein R8 is an alkyl group, R9 is a substituted or unsubstituted, straight chain or branched alkyl or alkylene group, and X− is an hydroxy ion, a halide ion, a sulfate ion, or a methanesulfonate ion, and
• (b) a radical scavenger selected from the group consisting of an hydroxybenzene, a pyrazolinone, a compound having an aminoxyl radical, a gluconolactone, a tertiary alkyl alcohol, and ascorbic acid;
• and
• ii) at least partially removing the post-CMP residue from the surface of the microelectronic device,
• wherein the removal composition removes less of the molybdenum material from the surface of the microelectronic device than the aqueous base composition.