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US 12,484,446 B2Granted
FIR infrared (FIR) sensor with two absorption layers
AssigneePixart Imaging Inc.
InventorsMing-Han Tsai, Chih-Fan Hu
Life of this patent
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Abstract
There is provided a far infrared (FIR) sensor device including a substrate, a thermopile structure and a heat absorption layer. The thermopile structure is arranged on the substrate. The heat absorption layer covers upon the thermopile structure, wherein the heat absorption layer has a hollow space which is formed by etching a metal layer in the heat absorption layer.
Claims11
A far infrared (FIR) sensor, comprising:
- a substrate;
- a thermopile structure, arranged on the substrate;
- a heat absorption layer, covering upon the thermopile structure, and comprising a first heat absorption layer stacking on a second heat absorption layer, wherein the first heat absorption layer and the second heat absorption layer are connected by a connection layer, and a cross section of the connection layer is smaller than cross sections of the first heat absorption layer and the second heat absorption layer;
- and
- a peripheral circuit arranged on the substrate and the peripheral circuit comprising multiple metal layers, wherein the connection layer is aligned with one of the multiple metal layers in a transverse direction.
2 more elements
A far infrared (FIR) sensor, comprising:
- a substrate;
- a thermopile structure, arranged on the substrate;
- and
- a heat absorption layer, covering upon the thermopile structure, and comprising a hollow space formed after a metal layer in the heat absorption layer is etched,
- wherein an upper surface of the heat absorption layer is further arranged with a blocking layer as an etch stop layer.
2 more elements
A far infrared (FIR) sensor, comprising:
- a substrate;
- a thermopile structure, arranged on the substrate;
- a heat absorption layer, covering upon the thermopile structure, and comprising a first heat absorption layer stacking on a second heat absorption layer, wherein the first heat absorption layer and the second heat absorption layer are connected by a connection layer, and a cross section of the connection layer is smaller than cross sections of the first heat absorption layer and the second heat absorption layer;
- and
- a peripheral circuit arranged on the substrate and the peripheral circuit comprising multiple metal layers, wherein the connection layer is not aligned with any one of the multiple metal layers in a transverse direction.
2 more elements
Dependencies are inferred from the claim text.