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US 12,484,321 B2Granted
CMOS compatible near-infrared sensor system
Assigneeams International AG
InventorGernot Fasching
Life of this patent
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Abstract
A surface plasmon-based photodetector includes: a silicon substrate; a grating in contact with a surface of the silicon substrate, in which the grating forms a Schottky diode with the semiconductor substrate; and a complementary-metal-oxide-semiconductor (CMOS) sample and hold stage as well as an analog-to-digital circuit (ADC) in the silicon substrate and arranged to detect electrical current generated at the Schottky diode.
Claims12
A surface plasmon-based photodetector comprising:
- a silicon substrate;
- a grating in contact with a surface of the silicon substrate, wherein the grating forms a Schottky diode with the silicon substrate;
- and
- a complementary-metal-oxide-semiconductor (CMOS) circuit comprising a sample and hold circuit and an analog-to-digital circuit (ADC) in the silicon substrate, wherein the CMOS circuit is arranged to detect electrical current generated at the Schottky diode.
1 more element
Dependencies are inferred from the claim text.