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US 12,484,256 B2Granted
Thin film transistor array, fabrication method thereof, and display apparatus comprising the thin film transistor
AssigneeLG Display Co., Ltd.
InventorsKyeongJu Moon, Seunghyo Ko, Nuri On
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Abstract
A thin film transistor includes an active layer of an oxide semiconductor, a gate electrode provided on or under the active layer while being spaced apart from the active layer and overlapping with at least a portion of the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes copper (Cu).
Claims17
A thin film transistor array comprising:
- a first thin film transistor and a second thin film transistor on a substrate, wherein the first thin film transistor includes:
- a first active layer disposed on the substrate;
- and
- a first gate electrode spaced apart from the first active layer and overlapping with at least a portion of the first active layer,
- wherein the second thin film transistor includes:
- a second active layer disposed on the substrate;
- and
- a second gate electrode spaced apart from the second active layer and overlapping with at least a portion of the second active layer,
- wherein the first active layer includes a first main active layer,
- the first main active layer includes a first carrier acceptor,
- the second active layer includes a second main active layer, and a second interface layer on the second main active layer, and
- the second interface layer includes a second carrier acceptor,
- wherein the second main active layer has a mobility greater than that of the second interface layer, and the second main active layer includes an oxide semiconductor material different from the second interface layer.
10 more elements
A display apparatus comprising:
- a thin film transistor array including a first thin film transistor and a second thin film transistor on a substrate;
- wherein the first thin film transistor includes:
- a first active layer disposed on the substrate;
- and
- a first gate electrode spaced apart from the first active layer and overlapping with at least a portion of the first active layer, and
- wherein the second thin film transistor includes:
- a second active layer disposed on the substrate;
- and
- a second gate electrode spaced apart from the second active layer and overlapping with at least a portion of the second active layer,
- wherein the first active layer includes a first main active layer,
- the first main active layer includes a first carrier acceptor,
- the second active layer includes a second main active layer, and a second interface layer on the second main active layer, and
- the second interface layer includes a second carrier acceptor,
- wherein the second main active layer has a mobility greater than that of the second interface layer, and the second main active layer includes an oxide semiconductor material different from the second interface layer.
11 more elements
Dependencies are inferred from the claim text.