Semiconductor device

A semiconductor device comprising:

• a plurality of first semiconductor elements that each have a first electrode, a second electrode, and a third electrode, a switching operation of each of the plurality of first semiconductor elements being controlled according to a first drive signal inputted to the third electrode;
• a first control terminal for inputting the first drive signal;
• a first conductive member electrically connected to the first control terminal and electrically interposed between the third electrodes of the plurality of first semiconductor elements;
• a plurality of first circuit components that are connected to the first conductive member and increase an impedance in a first frequency band;
• a plurality of second semiconductor elements that each have a fourth electrode, a fifth electrode, and a sixth electrode, a switching operation of each of the plurality of second semiconductor elements being controlled according to a second drive signal inputted to the sixth electrode;
• a second control terminal to which the second drive signal is inputted;
• a second conductive member electrically connected to the second control terminal and electrically connecting the sixth electrodes of the plurality of second semiconductor elements;
• a plurality of second circuit components that are connected to the second conductive member and increase an impedance in a second frequency band;
• and
• an insulating substrate having a substrate obverse surface and a substrate reverse surface that are spaced apart from each other in the thickness direction,
• wherein the plurality of first semiconductor elements are electrically connected to each other in parallel,
• the first frequency band includes a resonance frequency of a resonance circuit that is formed by including a parasitic inductance of the first conductive member,
• the third electrodes of the plurality of first semiconductor elements are electrically connected to each other via at least one of the plurality of first circuit components,
• the first conductive member includes a first signal wiring section to which the first control terminal is connected and that transmits the first drive signal, and a plurality of first connecting members respectively connected to the third electrodes of the plurality of first semiconductor elements,
• the first signal wiring section includes a plurality of first individual portions that are spaced apart from each other,
• the plurality of first connecting members are respectively connected to the plurality of first individual portions,
• each of the plurality of first individual portions is bonded to one of the plurality of first circuit components,
• the plurality of first semiconductor elements are aligned in a first direction perpendicular to a thickness direction of the plurality of first semiconductor elements,
• the plurality of first individual portions are aligned in the first direction, and are located on a first side in a second direction with respect to the plurality of first semiconductor elements, the second direction being perpendicular to the thickness direction and the first direction,
• the plurality of second semiconductor elements are electrically connected to each other in parallel,
• the second frequency band includes a resonance frequency of a resonance circuit that is formed by including a parasitic inductance of the second conductive member,
• the sixth electrodes of the plurality of second semiconductor elements are electrically connected to each other via at least one of the plurality of second circuit components,
• the second conductive member includes a second signal wiring section to which the second control terminal is connected and that transmits the second drive signal, and a plurality of second connecting members respectively connected to the sixth electrodes of the plurality of second semiconductor elements,
• the second signal wiring section includes a plurality of second individual portions that are spaced apart from each other,
• the plurality of second connecting members are respectively connected to the plurality of second individual portions,
• the first signal wiring section and the second signal wiring section are formed on the substrate obverse surface,
• each of the plurality of first semiconductor elements has a first-element obverse surface facing in a same direction as the substrate obverse surface in the thickness direction, and a first-element reverse surface facing in a same direction as the substrate reverse surface in the thickness direction,
• the first electrode is formed on the first-element reverse surface,
• the second electrode and the third electrode are formed on the first-element obverse surface,
• each of the plurality of second semiconductor elements has a second-element obverse surface facing in a same direction as the first-element obverse surface in the thickness direction, and a second-element reverse surface facing in a same direction as the first-element reverse surface in the thickness direction,
• the fourth electrode is formed on the second-element reverse surface, and
• the fifth electrode and the sixth electrode are formed on the second-element obverse surface.