Radio frequency power amplifier
AssigneeSTMicroelectronics France
InventorsSamia Ouyahia, Renaud Lemoine, Eric Wilhelm
Life of this patent
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Abstract
According to an embodiment, An integrated circuit comprising a first cascode radio frequency (RF) power amplifier that includes a first common source transistor having a gate configured to receive a first RF signal, and a source connected to a neutral point; a first common gate transistor having a gate and a drain connected to a power source node, and a source connected to a drain of the first common source transistor; and a first resistor coupled between a bulk of the first common gate transistor and a first bulk bias node configured to provide a voltage that is greater than or equal to a voltage at the source of the first common gate transistor, wherein the first resistor is configured to obtain a floating point.
Claims20
An integrated circuit comprising a first cascode radio frequency (RF) power amplifier comprising:
- a first common source transistor having a gate configured to receive a first RF signal, a source connected to a neutral point, and a bulk directly connected to the neutral point;
- a first common gate transistor having a gate and a drain connected to a power source node, and a source connected to a drain of the first common source transistor;
- and
- a first resistor coupled between a bulk of the first common gate transistor and a first bulk bias node configured to provide a voltage that is greater than or equal to a voltage at the source of the first common gate transistor, wherein the first resistor is configured to obtain a floating point.
An integrated circuit comprising a radio frequency (RF) power amplifier comprising:
- a common source transistor having a gate configured to receive an RF signal, a source connected to a neutral point, and a bulk directly connected to the source and to the neutral point;
- a first common gate transistor having a gate connected to a first bias voltage source, a drain coupled to a power source node, and a source coupled to a drain of the common source transistor;
- and
- a first resistor coupled between a bulk of the first common gate transistor and a first bulk bias node, wherein the first bulk bias node is configured to provide a voltage that is greater than or equal to a voltage at the source of the first common gate transistor, wherein the first resistor is configured to obtain a floating point.
An integrated circuit comprising a first cascode radio frequency (RF) power amplifier comprising:
- a first common source transistor having a gate configured to receive a first RF signal, a source connected to a neutral point;
- a first common gate transistor having a gate and a drain connected to a power source node, and a source connected to a drain of the first common source transistor;
- and
- a first resistor coupled between a bulk of the first common gate transistor and a first bulk bias node configured to provide a voltage that is greater than or equal to a voltage at the source of the first common gate transistor, wherein the first resistor is configured to obtain a floating point, and wherein the bulk of the first common gate transistor is connected to the source of the first common gate transistor via the first resistor.
Dependencies are inferred from the claim text.