Edge-emitting laser bar

An edge-emitting laser bar comprising:

• an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation;
• a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation;
• a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, wherein each contact element is assigned to an individual emitter and is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region;
• and
• a thermal decoupling structure in a region between two adjacent individual emitters, the thermal decoupling structure being configured to counteract a heat exchange between the two adjacent individual emitters,
• wherein the decoupling structure comprises an electrically conductive cooling element located on the contact side and completely covering a contiguous cooling region of the contact side,
• wherein the cooling element is completely electrically isolated from the semiconductor layer sequence,
• wherein the cooling element is thermally coupled to the semiconductor layer sequence along the cooling region, and
• wherein the cooling region has a width, measured along the lateral transverse direction, which is at least half a width of an adjacent contact region.