Semiconductor structure and method for manufacturing same

A method for manufacturing a semiconductor structure, comprising:

• providing a semiconductor substrate layer;
• forming an N-type waveguide structure on the semiconductor substrate layer, wherein a process for forming the N-type waveguide structure comprises:
• forming a first N-type waveguide layer on the semiconductor substrate layer;
• and forming a second N-type waveguide layer on a surface of the first N-type waveguide layer on a side away from the semiconductor substrate layer, wherein a conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer, and a valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer;
• and
• forming an active layer on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer;
• wherein the method further comprises:
• before forming the N-type waveguide structure, forming a first confining layer on the semiconductor substrate layer, wherein a difference between the conduction band level of the first N-type waveguide layer and a conduction band level of the first confining layer is less than a difference between the valence band level of the first N-type waveguide layer and a valence band level of the first confining layer, wherein the valence band level of the first N-type waveguide layer is higher than the valence band level of the first confining layer.