Semiconductor structure that includes self-aligned contact plugs and methods for manufacturing the same
AssigneeVanguard International Semiconductor Corporation
InventorsPo-Hsiang Liao, Sheng-Wei Fu, Chung-Yeh Lee
Life of this patent
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Abstract
A semiconductor structure includes a substrate, several gate structures formed in the substrate, dielectric portions formed on the respective gate structures, spacers adjacent to and extending along the sidewalls of the dielectric portions, source regions formed between the substrate and the spacers, and contact plugs formed between adjacent gate structures and contact the respective source regions. The source regions are adjacent to the gate structures. The sidewalls of the spacers are aligned with the sidewalls of the underlying source regions.
Claims19
A semiconductor structure, comprising:
- a substrate;
- gate structures in the substrate;
- dielectric portions on the respective gate structures;
- spacers adjacent to sidewalls of the dielectric portions and extending along the sidewalls of the dielectric portions;
- source regions between the substrate and the spacers, wherein the source regions are adjacent to the gate structures;
- contact plugs between the adjacent gate structures and in contact with the respective source regions;
- and
- a metal portion is formed on each of the contact plugs, and the metal portions are positioned between the adjacent dielectric portions, wherein the metal portions are offset from the respective contact plugs;
- wherein sidewalls of the spacers are level with sidewalls of the respective source regions that are under the spacers.
Dependencies are inferred from the claim text.