Alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in HVPE growth manner and method for manufacturing the same
AssigneesKorea Institute of Ceramic Engineering and Technology, Electronics and Telecommunications Research Institute
InventorsDae-Woo Jeon, Ji-Hyeon Park, Jae-Kyoung Mun
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Abstract
Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.
Claims13
A method for manufacturing an alpha gallium oxide thin-film structure having high conductivity using selective area growth in a HVPE (halide vapor phase epitaxy) growth manner, the method comprising:
- providing a substrate;
- forming an alpha gallium oxide thin-film on an upper surface of the substrate in a HVPE growth manner;
- forming a nitride film pattern on the substrate and the alpha gallium oxide thin-film so as to expose only a selected area of the alpha gallium oxide thin-film;
- and
- performing re-growth in a HVPE growth manner using a portion of the alpha gallium oxide thin-film located in the exposed selected area as a seed, thereby forming an alpha gallium oxide re-growth pattern,
- wherein
- the alpha gallium oxide thin-film is re-heated while the exposed selected area thereof is exposed to an inert gas atmosphere;
- and
- the re-growth in the HVPE growth manner is carried out using the re-heated alpha gallium oxide thin-film as the seed to form the alpha gallium oxide re-growth pattern.
An alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, the alpha gallium oxide thin-film structure comprising:
- a substrate;
- an alpha gallium oxide thin-film formed on an upper surface of the substrate;
- and
- an alpha gallium oxide re-growth pattern deposited only on a selected area of the alpha gallium oxide thin-film,
- wherein the alpha gallium oxide thin-film structure is free of a nitride film pattern used as a mask.
Dependencies are inferred from the claim text.