Method of producing semiconductor nanoparticles
AssigneesNational University Corporation Tokai National Higher Education and Research System, Osaka University, Nichia Corporation
InventorsTsukasa Torimoto, Tatsuya Kameyama, Susumu Kuwabata, Taro Uematsu, Yohei Ikagawa, Daisuke Oyamatsu, Tomoya Kubo
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Abstract
Provided is a method of producing semiconductor nanoparticles exhibiting band-edge emission with a short emission peak wavelength. The method of producing semiconductor nanoparticles comprises: obtaining a first mixture that contains a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles.
Claims9
A method of producing semiconductor nanoparticles, the method comprising:
- obtaining a first mixture containing a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent;
- and
- performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles.
Dependencies are inferred from the claim text.