Composition

A method for producing a semiconductor wafer, the method comprising the steps of:

• applying an adhesive for temporary bonding to a semiconductor wafer substrate and/or a support member to bond the semiconductor wafer substrate and the support member;
• curing the adhesive for temporary bonding by irradiating light having a wavelength of 350 nm to 700 nm to obtain a bonded body,
• wherein the cured adhesive satisfies all the following conditions:
• in a light transmittance of a film of the cured adhesive having a thickness of 50 μm, a light transmittance in a wavelength region of 395 nm or more among the wavelengths of a light source used for curing is 70% or more,
• in a light transmittance of a film of the cured adhesive having a thickness of 50 μm, a light transmittance in a wavelength region of 385 nm or more and less than 395 nm among the wavelengths of a light source used for curing is 20% or more, and
• in a light transmittance of a film of the cured adhesive having a thickness of 50 μm, a light transmittance at a wavelength of 355 nm of UV laser is 1% or less;
• and
• irradiating the bonded body with laser light having a wavelength of less than 385 nm to release the semiconductor wafer substrate, wherein
• the cured adhesive for temporary bonding constitutes a single layer in the bonded body.