Process for manufacturing a silicon carbide coated body
OwnerPeter J. Guercio, Paul Westphal +1inventors
InventorsPeter J. Guercio, Paul Westphal, Kirk Allen Fisher
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Abstract
The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.
Claims17
A method of manufacturing a silicon carbide coated graphite body by chemical vapor deposition, comprising:
- providing as a porous graphite body a porous graphite substrate having an open porosity between 6% and less than 12% into a reaction chamber;
- exposing the porous graphite body to dimethyldichlorosilane and gaseous H2;
- depositing a substantially stoichiometric silicon carbide, having a Si:C ratio of 1:1, with substantially tetrahedral silicon carbide crystals on the porous graphite substrate, wherein the depositing is carried out at a temperature in a range of 1000 to 1200° C. at atmospheric pressure;
- and
- modifying the surface porosity of the porous graphite substrate, wherein the modifying the surface porosity increases the surface pore diameter between 60 to 100%.
Dependencies are inferred from the claim text.