Semiconductor pressure sensor and manufacturing method of semiconductor pressure sensor

A semiconductor pressure sensor comprising:

• a first silicon substrate including a first recessed part;
• a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space;
• and
• a gauge resistance configured to output a deformation amount of the diaphragm by using electrical characteristics, wherein
• a plurality of second spaces are hermetically sealed in a state of being separated away from the first space between the first silicon substrate and the second silicon substrate, and
• the plurality of second spaces are provided in only one of a first end side or a second end side of the first space, or the plurality of second spaces includes a first plurality of second spaces provided in the first end side and a second plurality of second spaces provided in the second end side,
• the plurality of second spaces being hermetically sealed such that hydrogen gas permeating toward the first space would fill the plurality of second spaces before permeating into the first space,
• the first silicon substrate includes a plurality of second recessed parts surrounding the plurality of second spaces,
• the semiconductor pressure sensor further comprises a silicon oxide film being not provided on a side surface and a bottom surface of the plurality of second recessed parts and being connected to the first silicon substrate and the second silicon substrate,
• the second silicon substrate includes a lower surface that comprises the diaphragm, and
• the lower surface of the second silicon substrate is an upper surface of the plurality of second spaces.