Driving substrate with a thin film transistor having overlapped metal layers and semiconductor layer
AssigneeInnolux Corporation
InventorMay Pan
Life of this patent
Estimating the term…
Abstract
A driving substrate is provided. The driving substrate includes a substrate and a thin film transistor disposed on the substrate. The thin film transistor includes a first metal layer, a second metal layer, and a semiconductor. The first metal layer has a first portion, a second portion, and a first bridge. The second metal layer has a third portion, a fourth portion, and a second bridge. The first metal layer is overlapped with the second metal layer and the semiconductor. In a top view, the first portion and the second portion are separated by a first gap and are connected by the first bridge, the third portion and the fourth portion are separated by the first gap and are connected by the second bridge.
Claims9
A driving substrate, comprising:
- a substrate;
- and
- a thin film transistor disposed on the substrate and comprising:
- a first metal layer having a first island shape portion, a second island shape portion, and a first bridge extending along a first direction, wherein in a second direction perpendicular to the first direction, a width of the first bridge is less than both a width of the first island shape portion and a width of the second island shape portion;
- a second metal layer having a third portion, a fourth portion, and a second bridge;
- and
- a semiconductor, wherein the first metal layer, the second metal layer, and the semiconductor are overlapped with each other;
- wherein in a top view, the first island shape portion and the second island shape portion are separated by a first gap and are connected by the first bridge, the third portion and the fourth portion are separated by the first gap and are connected by the second bridge.
Dependencies are inferred from the claim text.