Seal ring for hybrid-bond
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Chia Hu, Chun-Chiang Kuo, Sen-Bor Jan, Ming-Fa Chen, Hsien-Wei Chen
Life of this patent
Estimating the term…
Abstract
A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.
Claims20
A method of forming a semiconductor structure, the method comprising:
- aligning a first die and a second die,
- wherein the first die comprises:
- a first substrate,
- a first bonding layer over a first side of the first substrate, and
- a first plurality of bond pads in the first bonding layer, and wherein the second die comprises:
- a second substrate,
- a second bonding layer,
- a first seal ring embedded in the second die, wherein the second
- bonding layer between the first seal ring and the first die along a direction perpendicular to a surface of the second bonding layer is free of bond pads;
- and
- bonding the first bonding layer of the first die to the second bonding layer of the second die.
A method of forming a semiconductor structure, the method comprising:
- aligning a first die and a second die,
- wherein the first die comprises:
- a first substrate,
- a first bonding layer over a first side of the first substrate, and
- a first plurality of bond pads in the first bonding layer, and wherein the second die comprises:
- a second substrate,
- a second bonding layer,
- a second plurality of bond pads in the second bonding layer,
- a first seal ring embedded in the second die, the first seal ring having an inner edge facing inward toward a center region of the second die in a plan view and an outer edge facing outward away from a center region of the second die in the plan view;
- and
- bonding the first bonding layer of the first die to the second bonding layer of the second die, wherein the first bonding layer and the second bonding layer along an interface between the first die and the second die are free of bond pads in an area directly between the first seal ring and the first substrate, wherein the area has a first edge defined by the inner edge of the first seal ring along a first line perpendicular to a major surface of the second bonding layer and a second edge defined by the outer edge of the first seal ring along a second line perpendicular to the major surface of the second bonding layer.
A method of forming a semiconductor structure, the method comprising:
- bonding a first die to a second die,
- wherein the first die comprises:
- a first bonding dielectric layer,
- a first plurality of bond pads disposed at a first surface of the first bonding dielectric layer, and
- a first seal ring embedded in the first die, and
- wherein the second die comprises:
- a second bonding dielectric layer, wherein the second bonding dielectric layer is bonded to the first bonding dielectric layer,
- a second plurality of bond pads disposed at a second surface of the second bonding dielectric layer, wherein the first plurality of bond pads are bonded to the second plurality of bond pads, and
- wherein a keep out area adjacent the first plurality of bond pads and the second plurality of bond pads is free of bond pads in the first bonding dielectric layer, wherein the keep out area extends from the first plurality of bond pads to an edge of the first die.
Dependencies are inferred from the claim text.