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US 12,476,143 B2Granted
Backside reactive inhibition gas
AssigneeLam Research Corporation
InventorsGang Liu, Anand Chandrashekar, Tsung-Han Yang, Michael Bowes, Leonard Wai Fung Kho, Eric H. Lenz
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Abstract
Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.
Claims13
A method comprising:
- providing a substrate having a metal deposited in features in the substrate, the substrate having a frontside, a backside, and an edge;
- and
- performing a non-plasma inhibition treatment on surfaces of the deposited metal to inhibit nucleation on the treated surfaces, the non-plasma inhibition treatment comprising flowing an inhibition gas from a gas inlet on the frontside of the substrate and flowing the inhibition gas from the backside of the substrate around the edge of the substrate.
Dependencies are inferred from the claim text.