Semiconductor structure for digital and radiofrequency applications, and method for manufacturing such a structure

A method of fabricating a semiconductor-on-insulator multilayer structure, comprising the following steps:

• providing a first donor substrate,
• forming a weakened zone in the first donor substrate to delineate an intermediate first semiconductor layer,
• transferring the intermediate first semiconductor layer to a semiconductor carrier substrate, a first electrically insulating layer being at an interface between the first donor substrate and the semiconductor carrier substrate to form an intermediate structure comprising the semiconductor carrier substrate, the first electrically insulating layer and the transferred intermediate first semiconductor layer,
• locally removing one segment of the intermediate first semiconductor layer down to the first electrically insulating layer to form a cavity,
• depositing a third electrically insulating layer in the cavity, providing a second donor substrate, forming a weakened zone in the second donor substrate to delineate an active second semiconductor layer,
• transferring the active second semiconductor layer to the intermediate structure, a second electrically insulating layer being at an interface between the second donor substrate and the intermediate structure, and
• producing:
• at least one digital component in the active second semiconductor layer plumb with the intermediate first semiconductor layer to form an FD-SOI region, and
• at least one radiofrequency component in the active second semiconductor layer, the at least one radiofrequency component plumb with the third electrically insulating layer to form an RF-SOI region.

A method of fabricating a semiconductor-on-insulator multilayer structure, comprising the following steps:

• forming an intermediate structure by depositing an intermediate first semiconductor layer on a carrier substrate covered with a first electrically insulating layer,
• locally removing one segment of the intermediate first semiconductor layer down to the first electrically insulating layer to form a cavity,
• depositing a third electrically insulating layer in the cavity, providing a donor substrate,
• forming a weakened zone in the donor substrate to delineate an active second semiconductor layer,
• transferring the active second semiconductor layer to the intermediate structure, a second electrically insulating layer being at an interface between the donor substrate and the intermediate structure, and
• producing:
• at least one digital component in the active second semiconductor layer plumb with the intermediate first semiconductor layer to form an FD-SOI region, and
• at least one radiofrequency component on the active second semiconductor layer, the at least one radiofrequency component plumb with the third electrically insulating layer to form an RF-SOI region.