Multi-layer ion trap on shaped glass or dielectric substrate
AssigneeIonQ, Inc.
InventorsJason Madjdi Amini, Jonathan Albert Mizrahi, Jeremy Matthew Sage, James Walker Steere
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AssigneeIonQ, Inc.
InventorsJason Madjdi Amini, Jonathan Albert Mizrahi, Jeremy Matthew Sage, James Walker Steere
Estimating the term…
Aspects of the present disclosure describe devices trapping devices for use in quantum information processing (QIP) architectures, and more particularly, to the use and fabrication of a multi-layer ion trap on shaped glass or dielectric substrate. A method for fabricating the ion trap is described that includes preparing a back surface of the substrate, building a multi-layer stack on the top surface of the substrate, and completing the back etch to break through the substrate and etching through a metal and dielectric in the multi-layer stack to complete the formation of the ion trap. Shaping of the ion trap may also include trap narrowing features, wings, and/or undercutting. An ion trap fabricated using this approach may be used in a QIP system to trap atomic species provided through a hole in the back of the substrate for use as qubits in quantum operations and computations.
A method of fabricating a trap, comprising:
An ion trap, comprising:
A quantum information processing system, comprising:
Dependencies are inferred from the claim text.