System and method for ion source temperature control using symmetric or asymmetric application of force
AssigneeApplied Materials, Inc.
InventorsRyan Prager, John Alexander Walder
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AssigneeApplied Materials, Inc.
InventorsRyan Prager, John Alexander Walder
Estimating the term…
An ion source is disclosed, in which the compression force applied to the faceplate on the two sides of the extraction aperture may be varied independently. Modifying the compression force between the faceplate and arc chamber can enable temperature control of the ion source by modifying the thermal contact resistance between the two components. This may allow more control of the temperature of the faceplate, and more specifically, the temperature profile across the entire faceplate due to precise control of the thermal contact gradient along the length of the faceplate. The ion implantation system includes two adjustable tension systems, each of which includes an actuator. A controller is used to provide a command signal to each adjustable tension system. In some embodiments, a feedback signal is generated by each adjustable tension system, which is representative of the torque or force experienced by the actuator.
An ion implantation system, comprising:
An ion implantation system, comprising:
An ion implantation system, comprising:
Dependencies are inferred from the claim text.