Methods and apparatus for processing a substrate
AssigneeApplied Materials, Inc.
InventorsKatsumasa Kawasaki, Kartik Ramaswamy, Yue Guo, Chunlei Zhang, Sergio Fukuda Shoji, Jorge Zaninovich, Smbat Kartashyan
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AssigneeApplied Materials, Inc.
InventorsKatsumasa Kawasaki, Kartik Ramaswamy, Yue Guo, Chunlei Zhang, Sergio Fukuda Shoji, Jorge Zaninovich, Smbat Kartashyan
Estimating the term…
Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a first voltage/current (V/I) probe configured to connect to an input side of a matching network of the processing chamber and a second V/I probe configured to connect to an output side of the matching network and a processor coupled to the first V/I probe and the second V/I probe and configured to, based on a phase gap between a V and I of an RF signal detected by at least one of the first V/I probe or the second V/I probe at a target frequency, detect a minimum phase gap between the V and I, and control at least one of impedance tuning of the matching network or process control of the processing chamber using at least one of a peak or RMS of V, I and phase measured at the target frequency or under sweeping frequency.
An apparatus configured to couple to a processing chamber for processing a substrate comprising:
Dependencies are inferred from the claim text.