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US 12,476,046 B2Granted
Electronic device
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsMarios Barlas, Yannick Le Friec, Xavier Federspiel
Life of this patent
Estimating the term…
Abstract
A device includes a first layer, having a copper track located therein. The first layer is covered with a second layer including a cavity. The cavity exposes at least a portion of the track. The portion is covered with a third layer of titanium nitride doped with silicon.
Claims16
A device, comprising:
- a first layer;
- a plurality of copper tracks located in the first layer;
- a second layer covering the first layer and including a plurality of cavities each exposing at least a portion of a respective track;
- and
- a third layer of titanium nitride doped with silicon lining sidewalls of each cavity, on a top surface of the second layer between the cavities, and covering the exposed portion of each track, silicon concentration in the third layer being in a range from 10% to 20%.
2 more elements
A device, comprising:
- a first layer of insulating material having a plurality of copper tracks located therein;
- a second layer of insulating material on the first layer;
- a third layer of insulating material on the second layer;
- a plurality of cavities extending into a surface of the third layer and through the third layer and the second layer, each the plurality of cavities exposing a respective copper track;
- and
- a fourth layer of titanium nitride doped with silicon in each of the plurality of cavities and contacting a respective copper track, portions of the surface of the third layer between the plurality of cavities being exposed by the fourth layer in each of the plurality of cavities;
- a fifth layer of insulating material on the fourth layer, in the plurality of cavities, cavity, and on the surface of the third layer;
- a sixth layer of conductive material on the fifth layer, in the plurality of cavities, cavity, and on the surface of the third layer;
- and
- a seventh layer of insulating material on the sixth layer, in the plurality of cavities, cavity, and on the surface of the third layer.
7 more elements
A device, comprising:
- a first insulating layer;
- a plurality of conductive tracks in the first insulating layer, the plurality of conductive tracks including copper;
- a second insulating layer on the first insulating layer;
- a third insulating layer on the second insulating layer;
- a plurality of cavities in the second insulating layer and the third insulating layer, each of the plurality of cavities exposing a respective conductive track;
- a plurality of first electrodes of a capacitor in the plurality of cavities, respectively, the plurality of first electrodes including silicon-doped titanium nitride, each of the plurality of first electrodes in contact with a respective conductive track, the plurality of first electrodes exposing top surfaces of the third insulating layer between the plurality of cavities;
- an insulator of the capacitor on the plurality of first electrodes, in the plurality of cavities, and on the top surfaces of the third insulating layer between the plurality of cavities;
- and
- a second electrode of the capacitor on the insulator, in the plurality of cavities, and on the top surfaces of the third insulating layer between the plurality of cavities;
- and
- a fourth insulating layer on the second electrode, in the plurality of cavities, and on the top surfaces of the third insulating layer between the plurality of cavities.
8 more elements
Dependencies are inferred from the claim text.