3D semiconductor devices and structures with slits

A semiconductor device, the device comprising:

• a first level comprising memory control circuits, said memory control circuits comprising first transistors;
• a second level disposed on top of said first level, said second level comprising a first array of memory cells comprising second transistors;
• a third level disposed on top of said second level, said third level comprising a second array of memory cells comprising third transistors;
• a fourth level disposed on top of said third level, said fourth level comprising a third array of memory cells comprising fourth transistors,
• wherein said second level is bonded to said first level,
• wherein at least one of said second transistors is self-aligned to at least one of said third transistors, being processed following a same lithography step;
• and
• a plurality of slits disposed through said second level, said third level, and said fourth level,
• wherein said slits enable gate replacement of a plurality of said third transistors,
• wherein said second array of memory cells comprise a plurality of independently controlled memory units, and
• wherein said memory control circuits comprise cache memory.

A semiconductor device, the device comprising:

• a first level comprising memory control circuits, said first level comprising first transistors;
• a second level disposed on top of said first level, said second level comprising a first array of memory cells comprising second transistors;
• a third level disposed on top of said second level, said third level comprising a second array of memory cells comprising third transistors;
• a fourth level disposed on top of said third level, said fourth level comprising a third array of memory cells comprising fourth transistors,
• wherein said second level is bonded to said first level,
• wherein at least one of said second transistors is self-aligned to at least one of said third transistors, being processed following a same lithography step;
• a plurality of slits disposed through said second level, said third level, and said fourth level,
• wherein said slits enable gate replacement of a plurality of said third transistors,
• wherein said second array of memory cells comprise a plurality of independently controlled memory units;
• and
• a plurality of redundancy memory cells,
• wherein said memory control circuits comprise a plurality of refresh circuits for said memory units.