Error avoidance for partially programmed blocks of a memory device
AssigneeMicron Technology, Inc.
InventorsLi-Te Chang, Murong Lang, Zhenming Zhou
Life of this patent
Estimating the term…
Abstract
A block of a memory device is identified. A threshold voltage offset corresponding to a wordline associated with the block is identified based on a threshold voltage offset table. The threshold voltage offset table corresponds to at least one of: a value of a media state metric associated with the block, a wordline group of the wordline, or a difference between the wordline and a boundary wordline of the block. A read operations is performed on the block using a read level voltage modified by the threshold voltage offset, wherein the read level voltage is associated with the block.
Claims18
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled with the memory device, to perform operations comprising:
- identifying a block of the memory device;
- identifying, based on a threshold voltage offset table, a threshold voltage offset corresponding to a wordline associated with the block, wherein the threshold voltage offset table corresponds to at least one of:
- a value of a media state metric associated with the block, a wordline group of the wordline, or a difference between the wordline and a boundary wordline of the block, wherein the threshold voltage offset table comprises a plurality of records, and wherein a record of the plurality of records associates one or more threshold voltages to be applied to respective base voltage read levels for performing read operations;
- and
- performing a read operation on the block using a read level voltage modified by the threshold voltage offset, wherein the read level voltage is associated with the block.
A method comprising:
- identifying, by a processing device, a block of a memory device;
- identifying, based on a threshold voltage offset table, a threshold voltage offset corresponding to a wordline associated with the block, wherein the threshold voltage offset table corresponds to at least one of:
- a value of a media state metric associated with the block, a wordline group of the wordline, or a difference between the wordline and a boundary wordline of the block, wherein the threshold voltage offset table comprises a plurality of records, wherein a record of the plurality of records associates one or more threshold voltages to be applied to respective base voltage read levels for performing read operations;
- and
- performing a read operation on the block using a read level voltage modified by the threshold voltage offset, wherein the read level voltage is associated with the block.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- identifying a block of a memory device;
- identifying, based on a threshold voltage offset table, a threshold voltage offset corresponding to a wordline associated with the block, wherein the threshold voltage offset table corresponds to at least one of:
- a value of a media state metric associated with the block, a wordline group of the wordline, or a difference between the wordline and a boundary wordline of the block, wherein the threshold voltage offset table comprises a plurality of records, and wherein a record of the plurality of records associates one or more threshold voltages to be applied to respective base voltage read levels for performing read operations;
- and
- performing a read operation on the block using a read level voltage modified by the threshold voltage offset, wherein the read level voltage is associated with the block.
Dependencies are inferred from the claim text.