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US 12,474,861 B2Granted
Trim values for multi-plane operations
AssigneeMicron Technology, Inc.
InventorWilliam E. Benson
Life of this patent
Estimating the term…
Abstract
A request is received to perform a multi-plane operation for first data of a first plane and second data of a second plane of a memory device. Responsive to the request, first trim values are retrieved from first trim registers and second trim values are retrieved from second trim registers, the first trim values loaded to the first registers based on a first voltage distribution observed at the first plane during a first time period and the second trim values loaded to the second registers based on a second voltage distribution observed at the second plane during a second time period. The multi-plane operation is performed using at least the first trim values for the first data at the first plane and at least the second trim values for the second data at the second plane.
Claims17
A method comprising:
- determining a first voltage distribution at a first plane of a memory device between a first time period and a current time period and a second voltage distribution at a second plane of the memory device between a second time period and the current time period;
- determining a first cross temperature at the first plane between the first time period and the current time period and a second cross temperature at the second plane between the second time period and the current time period;
- loading a first set of trim values to a first set of trim registers allocated to the first plane of the memory device and a second set of trim values to a second set of trim registers allocated to the second plane of the memory device, wherein:
- the first set of trim values comprise a first trim value based on the first voltage distribution and an additional first trim value based on the first cross temperature, and
- the second set of trim values comprise a second trim value based on the second voltage distribution and an additional second trim value based on the second cross temperature;
- receiving a request to perform a multi-plane operation with respect to first data residing on the first plane of a memory device and second data residing on the second plane of the memory device;
- responsive to the request, retrieving the first set of trim values loaded to the first set of trim registers, and the second set of trim values loaded to the second set of trim registers;
- and
- performing the multi-plane operation using the first set of trim values for the first data at the first plane and the second set of trim values for the second data at the second plane.
6 more elements
A system comprising:
- a memory device comprising a plurality of planes;
- and
- a set of one or more processing devices coupled to the memory device, the set of one or more processing devices to perform operations comprising:
- determining a first voltage distribution at a first plane of a memory device between a first time period and a current time period and a second voltage distribution at a second plane of the memory device between a second time period and the current time period;
- determining a first cross temperature at the first plane between the first time period and the current time period and a second cross temperature at the second plane between the second time period and the current time period;
- loading a first set of trim values to a first set of trim registers allocated to the first plane of the memory device and a second set of trim values to a second set of trim registers allocated to the second plane of the memory device, wherein:
- the first set of trim values comprise a first trim value based on the first voltage distribution and an additional first trim value based on the first cross temperature, and
- the second set of trim values comprise a second trim value based on the second voltage distribution and an additional second trim value based on the second cross temperature;
- receiving a request to perform a multi-plane operation with respect to first data residing on the first plane of a memory device and second data residing on the second plane of the memory device;
- responsive to the request, retrieving the first set of trim values loaded to the first set of trim registers, and the second set of trim values loaded to the second set of trim registers;
- and
- performing the multi-plane operation using the first set of trim values for the first data at the first plane and the second set of trim values for the second data at the second plane.
9 more elements
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- determining a first voltage distribution at a first plane of a memory device between a first time period and a current time period and a second voltage distribution at a second plane of the memory device between a second time period and the current time period;
- determining a first cross temperature at the first plane between the first time period and the current time period and a second cross temperature at the second plane between the second time period and the current time period;
- loading a first set of trim values to a first set of trim registers allocated to the first plane of the memory device and a second set of trim values to a second set of trim registers allocated to the second plane of the memory device, wherein:
- the first set of trim values comprise a first trim value based on the first voltage distribution and an additional first trim value based on the first cross temperature, and
- the second set of trim values comprise a second trim value based on the second voltage distribution and an additional second trim value based on the second cross temperature;
- receiving a request to perform a multi-plane operation with respect to first data residing on the first plane of a memory device and second data residing on the second plane of the memory device;
- responsive to the request, retrieving the first set of trim values loaded to the first set of trim registers, and the second set of trim values loaded to the second set of trim registers;
- and
- performing the multi-plane operation using the first set of trim values for the first data at the first plane and the second set of trim values for the second data at the second plane.
6 more elements
Dependencies are inferred from the claim text.